GAFNIY O‘STIRILGAN KREMNIY NA’MUNALARINI YUQORI TEMPERATURADA ELEKTROFIZIK XUSUSIYATINING O‘ZGARISHI

Authors

  • Y.Z. Mardiyev, F.O. Boboyev Author

DOI:

https://doi.org/10.1808/xh4r4275

Keywords:

Monokristal kremniy, gafniy, solishtirma qarshilik, kislorod oksid, dieliktrik qatlam, to‘rt zont.

Abstract

Elektronika qurulmalari uchun yarimo‘tkazgichli materiallarni ishlab chiqish va takomillashtirish zamonaviy fan va texnikaning asosiy yo'nalishlari bo'lib qolmoqda. Kremniy kristall panjarasiga boshqa elementlarning atomlarini kiritish uning xususiyatlarini sezilarli darajada o‘zgartirish va yuqori samarali elektron qurilmalarni yaratish uchun yangi imkoniyatlar ochish imkonini beradi. Bugungi kunda qiyin eruvchi elementlardan  (QEE) foydalanish orqali radiatsiyaga chidamli materialni olish orqali turli xil yarimo‘tkazgichli qurulmalar tayorlash dolzard bo‘lib bormoqda. Bu ishda qiyin eruvchi materiallardan gafniyni tanlab oldik. Gafniy elementi Mendeliyev davriy jadvalida IV guruh elementi bo‘lib metal oylasiga mansub hisoblanadi. Gafniy elwmentini kremniyga legirlash bir muncha mushkul ishlardan biri hisoblanadi  chunki gafniy atomlarini o‘chami kremniynikiga nisbatan ancha katta shu bilan yuqori temperaturada kislorod, uglerod, bor, kremniy elementlari bilan tez reaksiyaga kirishuvchan hisoblanadi. Bundan xulosa qilish mumkunkiy yuqoridagi elementlar bilan har xil turdagi bog‘larni hosil qiladi. Bu jarayonlarni tahlil qilishda eng asosiy usullardan biri to‘rt zont  keng qo‘llaniladi. Bunda qalinlik bo‘yicha tahlil qilish ko‘p samarali fizik parametrlarni aniqlashga imkon beradi

References

L.T. Canham, “Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers,” Appl. Phys. Lett. 57, 1046-1990. https://doi.org/10.1063/1.103561

F. Huisken, H. Hofmeister, B. Kohn, M.A. Laguna, and V. Paillard, “Laser production and deposition of light-emitting silicon nanoparticles,” Appl. Surf. Sci. 154–155, 305 (2000). https://doi.org/10.1016/s0169-4332(99)00476-6

V. Vinciguerra, G. Franzo, F. Priolo, F. Iacona, and C. Spinella, “Quantum confinement and recombination dynamics in silicon nanocrystals embedded in Si/SiO2 superlattices,”J. Appl. Phys. 87, 8165 (2000). https://doi.org/10.1063/1.373513

F. Koch, and V. Petrova-Koch, “Light from Si-nanoparticle systems - a comprehensive view,”J. Non-Cryst. Solids, 198–200, 840 (1996). https://doi.org/10.1016/0022-3093(96)00067-1

Zh. Ma, X. Liao, J. He, W. Cheng, G. Yue, Y. Wang, and G. Kong, “Annealing behaviors of photoluminescence from SiOx:H,” J. Appl. Phys. 83, 7934 (1998). https://doi.org/10.1063/1.367973

M. Zaharias, H. Freistdt, F. Stolze, T.P. Drusedau, M. Rosenbauer, and M. Stutzmann, “Properties of sputtered a-SiOx:H alloys with a visible luminescence,” J. Non-Cryst. Solids, 164–166, 1089 (1993). https://doi.org/10.1016/0022-3093(93)91188-9

U. Kahler, and H. Hofmeister, “Silicon nanocrystallites in buried SiOx layers via direct wafer bonding,” Appl. Phys. Lett. 75, 641 (1999). https://doi.org/10.1063/1.124467

S. Zhang, W. Zhang, and J. Yuan, “The preparation of photoluminescent Si nanocrystal–SiOx films by reactive evaporation,” Thin Solid Films, 326, 92 (1998). https://doi.org/10.1016/S0040-6090(98)00532-X

H. Richter, Z.P. Wang, and L. Ley, “The one phonon Raman spectrum in microcrystalline silicon,”Solid State Commun. 39, 62 (1981). https://doi.org/10.1016/0038-1098(81)90337-9

Spectroscopic and structural investigation of undoped and Er3ю doped hafnium silicate layers L. Khomenkova, Y.-T. An, D. Khomenkov, X. Portier, C. Labbé , F. Gourbilleau

Downloads

Published

2024-10-11

How to Cite

Y.Z. Mardiyev, F.O. Boboyev. (2024). GAFNIY O‘STIRILGAN KREMNIY NA’MUNALARINI YUQORI TEMPERATURADA ELEKTROFIZIK XUSUSIYATINING O‘ZGARISHI. INTERNATIONAL JOURNAL OF SCIENCE AND TECHNOLOGY, 1(23), 29-33. https://doi.org/10.1808/xh4r4275

Similar Articles

61-70 of 151

You may also start an advanced similarity search for this article.